Make	: FEI
Model	: D-440
Specification	:
Operating Voltage(Electron & Ion Beam) up to 30kV 10nm

 The Dual Beam SEM/FIB equipment (FEI Helios 600) is composed of an electron coloum and an Ion coloum, the triangle between the two coloum is 52°.The The eccentric stage is capable of moving the sample orthogonal to one or other of the two beams, gas Injection (Inejcted needle of a Platinum (PT)- based precursor is shown here Blue line) assist milling or to make located deposition . Along with Pt Gas injection system, Tungsten gas Injection system and SIOX Insulation deposition systems are also attached.
 
                                                                           

 

 

Technical Characteristic:

1. Elstar UHR immersion lens FESEM column :
 Electronics scanning.
Constant Power lens Technology
Operating (probe)Current and Voltage: 5.4pA-22nA,  1kV-30kV

2. Ga Ion Coloum:
Galium Ion Source
Landing Voltage 0-30kV
Ion Beam Current and Voltage: 1.3pA-22nA,0kV-30 kV

3. Detectors:
ETD( Everhart-Thornley SD Detector)
TLD (Elster-in-lens secondary Detector)

4. Gas Injection System:
Platinum Deposition
Insulation Deposition(SIOx)
Enhanced etch (Carbon)
Tungsten Deposition.

5. Others:
 E-Beam and Ion Beam Lithography (NAVITY).