Rapid Thermal Annealing Furnace
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Name of the equipment/facility: Rapid Thermal Annealing Furnace
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Model: ANNEALSYS AS-MICRO
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Working Principle : Rapid thermal anneal (RTA) is a subset of Rapid Thermal Processing. It is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate.
Technical specification & Applications:
KEY Features:
- Sample size upto 2"x 2" or 50mm dia wafer of Si/STO/FTO/ Pt-Si (appropriate susceptor like quartz /high quality graphite/SiC be supplied that can accommodate materials stated above).
- Maximum usable temperature 1200oC
- Maximum instantaneous heating/cooling rate capability upto 50oC/s
- Minimum anneal hold time of at least 30 min at 1000oC.
- Chamber Vacuum capability to 10-6 mbar with appropriate display
- Separate Gas line system for handling Argon, Nitrogen and Oxygen
- Pyrometer based measurement of substrate temperature
Applications:
Rapid thermal anneal (RTA) is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate.
- Installed instrument photograph
- Photographs of the Scientific Results
- Suggestions of rate for the external users.